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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to KTA1283. B KTC3211 EPITAXIAL PLANAR NPN TRANSISTOR C A N MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 40 25 6 1.5 625 150 -55 150 UNIT V V V A mW L K D E G H F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification O:85 160 , Y:120 VCE(sat) VBE(sat) VBE fT Cob TEST CONDITION VCB=35V, IE=0 VEB=6V, IC=0 IC=100 A, IE=0 IC=2mA, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 MIN. 40 25 45 85 40 100 TYP. 135 160 110 0.28 0.98 0.66 190 9 MAX. 100 100 300 0.5 1.2 1.0 V V V MHz pF UNIT nA nA V V 200 , GR:160 300 1999. 11. 30 Revision No : 2 1/2 KTC3211 I C - VCE 0.5 COLLECTOR CURRENT I C (mA) 0.4 0.3 0.2 0.1 I B=0.5mA h FE - I C 1k DC CURRENT GAIN hFE I B=3.0mA I B=2.5mA I B=2.0mA I B=1.5mA I B=1.0mA VCE =1V 500 300 100 50 30 0 0 0.4 0.8 1.2 1.6 2.0 10 0.1 0.3 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I C - V BE 100 COLLECTOR CURRENT I C (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) VCE =1V V BE(sat), VCE(sat) - I C SATURATION VOLTAGE V BE(sat), V CE(sat) (mV) 5k 3k 1k 500 300 100 50 30 10 0.1 0.3 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) VCE (sat) VBE (sat) IC =10I B fT -IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300 100 50 30 VCE =10V C ob - VCB f=1MHz I E =0 100 50 30 10 5 3 10 1 3 5 10 30 50 100 300 COLLECTOR CURRENT I C (mA) 1 1 3 5 10 3 0 50 COLLECTOR-BASE VOLTAGE VCB (V) 1999. 11. 30 Revision No : 2 2/2 |
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